Contactless characterization of semiconductor devices using surface photocharge effect

Author

Das, P. ; Mihailov, V. ; Ivanov, O. ; Gueorgiev, V. ; Andreev, S. ; Pustovoit, V.I.

Author_Institution

Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

291

Lastpage

293

Abstract

A technique for evaluating electrical properties of semiconductor wafers and devices using the surface photocharge effect caused by laser radiation is proposed. The measurement setup used in the experiments is presented along with some preliminary results. In particular, experimental results are presented for MOS devices on silicon under bias. It is possible to distinguish from the experimental plots the depletion, accumulation, and inversion regions of the device. Information could be obtained from these curves in a manner analogous to CV plots.<>

Keywords

accumulation layers; inversion layers; laser beam applications; metal-insulator-semiconductor devices; photovoltaic effects; semiconductor device testing; semiconductor technology; surface potential; MOS devices; Si; accumulation region; contactless characterization; depletion region; electrical properties; inversion regions; laser radiation; semiconductor devices; semiconductor wafers; surface photocharge effect; Choppers; Contacts; Optical surface waves; Pulse amplifiers; Semiconductor devices; Semiconductor lasers; Silicon; Solids; Voltage; Wire;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145057

Filename

145057