First MOS transistors on insulator by silicon saturated liquid solution epitaxy

Author

Zingg, R.P. ; Nagel, N. ; Bergmann, R. ; Bauser, E. ; Höfflinger, B. ; Queisser, H.J.

Author_Institution

Inst. for Microelectron., Stuttgart, Germany

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

294

Lastpage

296

Abstract

Field-effect transistors have been built for the first time in silicon-on-insulator (SOI) films generated by liquid phase epitaxy from indium solutions. These silicon films grew up to 120 mu m laterally with a thickness of 3 mu m, yielding aspect ratios of 40:1 without any planarization. Thus the process holds promise for a simplified, low-cost SOI technology. The devices confirm moderate concentration of incorporated solvent atoms and exhibit interface-state densities at typical levels for

Keywords

carrier mobility; insulated gate field effect transistors; interface electron states; liquid phase epitaxial growth; semiconductor growth; semiconductor-insulator boundaries; MOS transistors; SOI transistors; Si-SiO/sub 2/; aspect ratios; carrier mobilities; compensation implants; complementary devices; enhancement/depletion transistors; interface-state densities; liquid phase epitaxy; low threshold voltage; saturated liquid solution epitaxy; Dielectric liquids; Epitaxial growth; FETs; Indium; Insulation; MOSFETs; Planarization; Semiconductor films; Silicon on insulator technology; Solvents;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145058

Filename

145058