DocumentCode
921949
Title
High-power high-efficiency operation of read-type IMPATT-diode oscillators
Author
Kim, Chong-Kwon ; Steele, R. ; Bierig, R.
Author_Institution
Raytheon Company, Special Microwave Devices Operation, Waltham, USA
Volume
9
Issue
8
fYear
1973
Firstpage
173
Lastpage
174
Abstract
C.W. operation of GaAs Schottky-barrier Read-type IMPATT-diode oscillators is reported. These devices exhibited efficiences from 20 to 24% with output powers of 2 ~ 3 W c.w. in the Ku-band. The best efficiency was 24%, with an output power of 1.8 W c.w., while the maximum output power was 3.2 W c.w., with an efficiency of 20.7% at frequencies near 14 GHz.
Keywords
IMPATT diodes; Schottky-barrier diodes; gallium arsenide; microwave oscillators; solid-state microwave devices; 14 GHZ; 3.2 W; CW operation; GaAs; IMPATT diodes; Ku-band; Read type devices; Schottky barrier diodes; microwave oscillators; solid state microwave circuits;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730128
Filename
4236069
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