Title :
Influence of heavy doping effects on the fT prediction of transistors
Author :
De Man, H. ; Mertens, Robert ; Van Overstraeten, R.
Author_Institution :
Lab. Fysika en Elektronika van de Halfgeleiders, Heverlee, Belgium
Abstract :
The gain¿bandwidth product fT of a bipolar transistor is calculated, taking the heavy doping effect in the emitter into account. This effect reduces fT, owing to a larger charge storage in the emitter neutral region and a decrease of the built-in voltage of the emitter-base depletion capacitance.
Keywords :
bipolar transistors; carrier density; semiconductor doping; bipolar transistors; capacitance; carrier density; grain bandwidth product; semiconductor doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730129
