• DocumentCode
    922033
  • Title

    A high-speed bulk semiconductor microwave switch utilizing GaAs1-xPxmixed crystals

  • Author

    Pearson, G.L.

  • Volume
    60
  • Issue
    4
  • fYear
    1972
  • fDate
    4/1/1972 12:00:00 AM
  • Firstpage
    456
  • Lastpage
    457
  • Abstract
    A new microwave switching device in which the switching time is limited only by electronic scattering events within the bulk semiconductor is described. When biased beyond threshold, the bulk GaAs0.7P0.3device exhibits an increase in resistance resulting in microwave switching in less than 200 ps.
  • Keywords
    Electric resistance; Electromagnetic heating; Electron mobility; Gallium arsenide; Impedance; Microwave devices; P-i-n diodes; Power semiconductor switches; Scattering; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1972.8663
  • Filename
    1450593
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=922033