Title :
Hg1-xCdxTe metal-semiconductor-metal (MSM) photodetectors
Author :
Leech, Patrick W. ; Stumpf, Erich ; Petkovic, Novica ; Cahill, Laurie W.
Author_Institution :
Telecom Res. Lab., Clayton, Vic., Australia
fDate :
8/1/1993 12:00:00 AM
Abstract :
Metal-semiconductor-metal (MSM) detectors with active layers of Hg 1-xCdxTe (x=0.62-0.74) and electrode spacings of 2, 4, and 6 μm have been fabricated and characterized. Direct-current measurements have shown a low dark current and high responsivity from 0.15 to 1.5 A/W at 10-V bias. The lowest values of dark current (0.16 mA cm2) were obtained for detectors which incorporated an overlayer of CdTe. For detectors without the overlayer, increasing the Cd mole fraction resulted in a decrease in the dark current and a reduction in the 300-nm responsivity. Measurements of frequency response for these detectors show a maximum loss of 8 dB to 20 GHz. These results compare favorably with high-performance MSM detectors based on In0.53Ga0.47As with a lattice-matched barrier layer of In0.52Al0.48As
Keywords :
II-VI semiconductors; cadmium compounds; frequency response; mercury compounds; metal-semiconductor-metal structures; photodetectors; 2 to 6 micron; 20 GHz; 8 dB; Hg1-xCdxTe; MSM; active layers; dark current; electrode spacings; frequency response; overlayer; photodetectors; responsivity; Current measurement; Dark current; Detectors; Electrodes; Frequency measurement; Gallium arsenide; MOCVD; Mercury (metals); Photodetectors; Tellurium;
Journal_Title :
Electron Devices, IEEE Transactions on
