Title :
A MODFET-based optoelectronic integrated circuit receiver for optical interconnects
Author :
Ketterson, Andrew A. ; Seo, Jong-Wook ; Tong, Minh H. ; Nummila, Kari L. ; Morikuni, James J. ; Cheng, Keh-Yung ; Kang, Sung-Mo ; Adesida, Ilesanmi
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
The design, fabrication, and characterization of a 0.85-μm sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is based on pseudomorphic InGaAs on GaAs modulation-doped field-effect transistors (MODFETs) and metal-semiconductor-metal (MSM) photodetectors. High-performance quarter-micrometer MODFETs with ft´s of ~70 GHz are utilized in a two-stage transimpedance amplifier. An asymmetric and a symmetric amplifier design are compared. The symmetric design is found to provide the desired zero DC offset voltage for a variety of supply voltages. Excess MSM-detector dark current and low-frequency internal gain are greatly reduced through the use of a silicon passivation layer and/or AlGaAs cap layer. Receiver transimpedances between 100 and 5000 Ω are obtained by varying the bias on an active feedback resistor. The parasitic capacitances of this common-gate feedback FET are studied. A transimpedance amplifier bandwidth as high as 14 GHz and an overall photoreceiver bandwidth of 11 GHz are measured
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; optical interconnections; optical receivers; 0.85 micron; 11 GHz; 14 GHz; AlGaAs cap layer; GaAs; InGaAs-GaAs; MODFET-based optoelectronic integrated circuit receiver; MSM photodetectors; active feedback resistor; common-gate feedback FET; dark current; low-frequency internal gain; optical interconnects; parasitic capacitances; photoreceiver; silicon passivation layer; symmetric amplifier; transimpedances; two-stage transimpedance amplifier; zero DC offset voltage; Bandwidth; FETs; Feedback; HEMTs; Indium gallium arsenide; Integrated optoelectronics; MODFET circuits; MODFET integrated circuits; Optical device fabrication; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
