Abstract :
As an application of the authors previous model for MIS (metal-insulator-semiconductor) devices, a detailed model for MIS solar cells has been developed that covers a wide range of parameters, including surface states, silicon dioxide thickness, substrate doping, fixed oxide charges, substrate thickness, and metal work function. It also takes the nonequilibrium conditions into consideration. The effects of using the actual permittivity and barrier height of thin oxide are discussed
Keywords :
metal-insulator-semiconductor devices; semiconductor device models; solar cells; MIS devices; analytical model; barrier height; fixed oxide charges; metal work function; nonequilibrium conditions; oxide thickness; permittivity; solar cell application; substrate doping; substrate thickness; surface states; Analytical models; Bandwidth; Charge carrier processes; Electrons; Energy states; Metal-insulator structures; Photovoltaic cells; Semiconductor process modeling; Substrates; Tunneling;
