Title :
Impact of reactive ion etching using O2+CHF3 plasma on the endurance performance of FLOTOX EEPROM cells
Author :
Papadas, C. ; Ghibaudo, G. ; Pananakakis, G. ; Pio, F. ; Riva, C. ; Ghezzi, P.
Author_Institution :
Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France
fDate :
8/1/1993 12:00:00 AM
Abstract :
The influence of the reactive ion etching (RIE) process step performed with O2+CHF3 plasma on the endurance performance of FLOTOX EEPROM cells is investigated. The comparison with the standard wet etching procedure (WEP) shows that the observed higher programming window degradation ΔWp as well as the unbalanced high-to-low state threshold-voltage shifts can be quantitatively attributed to the fluorine (F) contamination of the tunnel oxide layer near the floating gate (FG) electrode
Keywords :
EPROM; circuit reliability; integrated circuit testing; integrated memory circuits; sputter etching; FLOTOX EEPROM cells; O2; endurance performance; floating gate; programming window degradation; reactive ion etching; trifluoromethane; tunnel oxide layer; unbalanced high-to-low state threshold-voltage shifts; Contamination; Degradation; EPROM; Microelectronics; Plasma applications; Plasma devices; Research and development; Thickness control; Threshold voltage; Wet etching;
Journal_Title :
Electron Devices, IEEE Transactions on
