Title :
High-gain lateral p-n-p bipolar action in a p-MOSFET structure
Author :
Verdonckt-Vandebroek, Sophie ; You, Jaehee ; Woo, Jason C S ; Wong, S. Simon
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
Lateral p-n-p bipolar junction transistors (BJTs) fabricated using a bulk 0.25 mu m CMOS technology are presented. The devices are structurally the same as p-MOSFETs in which the gate and the n-well are internally connected to form the base. The p-n-p BJT has an adjustable current gain which can be higher than 1000 and its peak cutoff frequency is 3.7 GHz. Since the lateral p-n-p BJT is fully process compatible with submicrometer CMOS and/or BiCMOS technologies, extension to a BiCMOS and/or complementary BiCMOS process is readily achieved.<>
Keywords :
BIMOS integrated circuits; CMOS integrated circuits; insulated gate field effect transistors; 0.25 micron; 3.7 GHz; CMOS technology; lateral p-n-p bipolar action; p-MOSFET structure; submicron BiCMOS; BiCMOS integrated circuits; CMOS process; CMOS technology; Charge carrier processes; Cutoff frequency; Electric variables; Electron emission; Implants; MOSFET circuits; P-n junctions;
Journal_Title :
Electron Device Letters, IEEE
