DocumentCode
923071
Title
Application of the Two-Way Balanced Amplifier Concept to Wide-Band Power Amplification Using GaAs MESFET´s
Author
Niclas, Karl B. ; Wilser, Walter T. ; Gold, Wchard R. ; Hitchens, William R.
Volume
28
Issue
3
fYear
1980
fDate
3/1/1980 12:00:00 AM
Firstpage
172
Lastpage
179
Abstract
An X-band GaAs FET power amplifier has been developed, significantly extending the bandwidth capabilities of such amplifiers reported to date. An output power of 1 W with an associated gain of 7.7 dB was achieved from 7.25 to 12.0 GHz by means of combining the power of two amplifier modules. Each of these modules consist of two balanced submodules cascaded to a two-stage unit. The transistor used in the "two-way balanced amplifier" has gate dimensions of 1000x1 mu m. The technology, RF performance, and characterization of the transistor are discussed in detail, as are the design and performance of both the single-ended and two-way balanced amplifier modules.
Keywords
Bandwidth; Broadband amplifiers; FETs; Gain; Gallium arsenide; MESFETs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1980.1130037
Filename
1130037
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