Model of a metal-oxide-silicon transistor operating in the saturation region

The output resistance of an m.o.s. transistor operating in the saturation region is studied experimentally and theoretically. New experimental properties of the `resistance¿current¿ product are described. A model is proposed in which the structure is divided into two sections. In the source section, a gradual length approximation is assumed, taking into account the mobility¿field dependence; while in the drain section, the mobile-carrier charge is included in the `equivalent doping¿. The continuity conditions between the two regions are described. Good agreement is found between the theory and the experimental results.