Title :
Solid-phase formation of transistor emitters at low temperature
Author :
Fern, A.M. ; McCaldin, J.O.
Author_Institution :
Calif. Inst. Tech., Pasadena, Calif.
Abstract :
The solid-phase reaction of evaporated Al on n-type Ge at 310°C was used to form the emitter of a transistor. Hole injection efficiencies as large as 95 percent were observed.
Keywords :
Artificial intelligence; Etching; Fabrication; Germanium alloys; Hafnium; Heat treatment; Solid state circuits; Surface finishing; Temperature; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8846
