DocumentCode
923975
Title
Power Considerations on IMPATT-Diode Arrays with Incomplete Thermal Isolation
Author
Suzuki, Hiroshi ; Kurita, Osamu ; Ino, Masayuki ; Makimura, Takashi ; Ohmori, Masamichi
Volume
28
Issue
6
fYear
1980
fDate
6/1/1980 12:00:00 AM
Firstpage
632
Lastpage
638
Abstract
Power output characteristics are discussed for an IMPATT-diode array in which the thermal isolation between the diodes is not complete. The degree of thermal isolation is treated by modifying the thermal resistance. The power output characteristics, calculated by the theory, agree with the characteristics obtained from experiments for a two-diode array. In this experiment, the diode arrangement is unsymmetrical with respect to the quartz standoff, in constrast to the symmetrical arrangement ordinarily used in X band. The 380-mW (70-GHz) power output obtained from an array composed of two Si DDR diodes is 1.7 times that of single diode operation.
Keywords
Circuit optimization; Corrugated surfaces; Diodes; Laboratories; Power generation; Surface waves; Telegraphy; Telephony; Thermal resistance; Transistors;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1980.1130131
Filename
1130131
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