Vertical high-mobility wrap-gated InAs nanowire transistor

Author

Bryllert, Tomas ; Wernersson, Lars-Erik ; Fröberg, Linus E. ; Samuelson, Lars

Author_Institution

Dept. of Solid State Phys., Lund Univ., Sweden

Volume

Issue

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

323

Lastpage

325

Abstract

In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 × 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V_ds=0.15 V (V_g=0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.

Keywords

III-V semiconductors; MISFET; indium compounds; nanowires; 0.15 V; 80 nm; InAs; current saturation; nanowire transistor; selective epitaxy growth; vertical high mobility wrap-gated field-effect transistor; Epitaxial growth; FETs; Nanostructures; Physics; Semiconductor materials; Solid state circuits; Sputter etching; Transistors; Wet etching; Wires; Field-effect transistor (FET); InAs; nanowires; wrap gate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.873371

Filename

1626445

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=924422