Charge-based capacitance measurement for bias-dependent capacitance

Author

Chang, Yao-Wen ; Chang, Hsing-Wen ; Lu, Tao-Cheng ; King, Ya-Chin ; Ting, WenChi ; Ku, Yen-Hui Joseph ; Lu, Chih-Yuan

Author_Institution

Macronix Int. Co. Ltd., Hsinchu, Taiwan

Volume

27

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

390

Lastpage

392

Abstract

In this letter, charge-based capacitance measurement (CBCM) is applied to characterize bias-dependent capacitances in a CMOS transistor. Due to its special advantage of being free from the errors induced by charge injection, the operation of charge-injection-induced-error-free CBCM allows for the extraction of full-range gate capacitance from the accumulation region to the inversion region and the overlap capacitance of MOSFET devices with submicrometer dimensions.

Keywords

MOSFET; capacitance measurement; inversion layers; semiconductor device measurement; CMOS transistor; MOSFET devices; charge injection; charge-based capacitance measurement; gate capacitance; inversion region; Capacitance measurement; Capacitors; Charge measurement; Current measurement; Integrated circuit interconnections; Integrated circuit measurements; Length measurement; MOSFET circuits; Parasitic capacitance; Testing; Capacitance measurement; MOSFET capacitor; charge based; charge-based capacitance measurement (CBCM); effective channel length;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.873368

Filename

1626466