DocumentCode
924741
Title
Improved performance of X-band TRAPATT´s
Author
Grace, M.I. ; Kroger, Heikki
Volume
60
Issue
11
fYear
1972
Firstpage
1443
Lastpage
1444
Abstract
Silicon TRAPATT diodes have been operated at over 40-percent efficiency in X band. This improved efficiency has been associated with steep doping gradients at the epitaxial layer substrate interface and low parasitic series resistances of the high-performance diodes.
Keywords
Diodes; Doping; Epitaxial layers; Filters; Frequency; Oscillators; Packaging; Passband; Substrates; Varactors;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1972.8921
Filename
1450851
Link To Document