DocumentCode
924951
Title
Double schottky-barrier diode power sensor
Author
An, T.Y. ; Cullen, A.L.
Author_Institution
East China Normal University, Department of Physics, Shanghai, China
Volume
130
Issue
2
fYear
1983
fDate
3/1/1983 12:00:00 AM
Firstpage
160
Lastpage
165
Abstract
A theory of the double Schottky-barrier diode power sensor is developed. It is shown that, by using two such diodes in a voltage-doubling circuit, the otherwise serious effects of the presence of spurious second harmonics in the source can be almost eliminated if the diodes have almost identical ideality factors. The theory is tested experimentally, and very good agreement with the theoretical predictions is found. A simple approximate formula is given from which it is possible to estimate the extent to which second-harmonic errors are eliminated when the ideality factors are different. The effect of third-harmonic content in the source is also calculated, although, in this case, the double-diode circuit offers no improvement over a single diode. The voltage-doubling effect, although incidental to the main purpose of the work described, offers a useful additional advantage.
Keywords
Schottky-barrier diodes; electric sensing devices; double Schottky-barrier diode power sensor; errors; spurious second harmonics; third-harmonic content; voltage-doubling circuit;
fLanguage
English
Journal_Title
Microwaves, Optics and Antennas, IEE Proceedings H
Publisher
iet
ISSN
0143-7097
Type
jour
DOI
10.1049/ip-h-1.1983.0026
Filename
4645707
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