DocumentCode
925050
Title
Punchthrough currents in short-channel m.o.s.t. devices
Author
Stuart, R.A. ; Eccleston, W.
Author_Institution
University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
Volume
9
Issue
25
fYear
1973
Firstpage
586
Lastpage
587
Abstract
Measurements have been performed on the source-leakage currents associated with short-channel m.o.s.t. devices. Both space-charge-limited and non-space-charge-limited punchthrough currents have been observed as a function of gate and drain voltages, and physical mechanisms describing these currents are briefly discussed.
Keywords
field effect transistors; leakage currents; space-charge-limited conduction; punchthrough currents; short channel MOST devices; source leakage currents; space charge limited currents;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730434
Filename
4236391
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