DocumentCode
925169
Title
Two movable-plate nitride-loaded MEMS variable capacitor
Author
Bakri-Kassem, Maher ; Mansour, Raafat R.
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of Waterloo, Ont., Canada
Volume
52
Issue
3
fYear
2004
fDate
3/1/2004 12:00:00 AM
Firstpage
831
Lastpage
837
Abstract
A microelectromechanical systems (MEMS) variable capacitor having two movable plates loaded with a nitride layer is proposed. A trench in the silicon substrate underneath the capacitor is used to decrease the parasitic capacitance. The use of an insulation dielectric layer on the bottom plate of the MEMS capacitor increases the capacitor´s tuning range and eliminates stiction. Experimental and theoretical results are presented for two capacitors having different capacitance values. The measured tuning range is found to be 280% at 1 GHz. The achievable tuning range far exceeds that of the traditional parallel-plate MEMS variable capacitors. The proposed MEMS variable capacitor is built using the MetalMUMP´s process.
Keywords
circuit tuning; isolation technology; micromechanical devices; varactors; 1 GHz; MEMS variable capacitor; MetalMUMP process; Smith chart; insulation dielectric layer; silicon substrate trench; tunable elements; two movable-plate nitride-loaded capacitor; varactors; Capacitors; Dielectric measurements; Dielectric substrates; Dielectrics and electrical insulation; Microelectromechanical systems; Micromechanical devices; Parasitic capacitance; Silicon; Tuning; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2004.823598
Filename
1273724
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