• DocumentCode
    925169
  • Title

    Two movable-plate nitride-loaded MEMS variable capacitor

  • Author

    Bakri-Kassem, Maher ; Mansour, Raafat R.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of Waterloo, Ont., Canada
  • Volume
    52
  • Issue
    3
  • fYear
    2004
  • fDate
    3/1/2004 12:00:00 AM
  • Firstpage
    831
  • Lastpage
    837
  • Abstract
    A microelectromechanical systems (MEMS) variable capacitor having two movable plates loaded with a nitride layer is proposed. A trench in the silicon substrate underneath the capacitor is used to decrease the parasitic capacitance. The use of an insulation dielectric layer on the bottom plate of the MEMS capacitor increases the capacitor´s tuning range and eliminates stiction. Experimental and theoretical results are presented for two capacitors having different capacitance values. The measured tuning range is found to be 280% at 1 GHz. The achievable tuning range far exceeds that of the traditional parallel-plate MEMS variable capacitors. The proposed MEMS variable capacitor is built using the MetalMUMP´s process.
  • Keywords
    circuit tuning; isolation technology; micromechanical devices; varactors; 1 GHz; MEMS variable capacitor; MetalMUMP process; Smith chart; insulation dielectric layer; silicon substrate trench; tunable elements; two movable-plate nitride-loaded capacitor; varactors; Capacitors; Dielectric measurements; Dielectric substrates; Dielectrics and electrical insulation; Microelectromechanical systems; Micromechanical devices; Parasitic capacitance; Silicon; Tuning; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2004.823598
  • Filename
    1273724