A comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICs

A new comprehensive wide-band compact-modeling methodology for on-chip spiral inductors is presented. The new modeling methodology creates an equivalent-circuit model consisting of frequency-independent circuit elements. A fast automated extraction procedure is developed for determining the circuit element values from two-port S-parameter measurement data. The methodology is extremely flexible in allowing for accurate modeling of general classes of spiral inductors on high- or low-resistivity substrate and for large spirals exhibiting distributed trends. The new modeling methodology is applied to general classes of spirals with various sizes and substrate parameters. The extracted models show excellent agreement with the measured data sets over the frequency range of 0.1-10 GHz.