Impact-ionization effects on the high-frequency behavior of HFETs

Author

Isler, Mark ; Schünemann, Klaus

Author_Institution

Dept. of Microwave Eng., Tech. Univ. Hamburg-Harburg, Hamburg, Germany

Volume

52

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

858

Lastpage

863

Abstract

A new small-signal equivalent-circuit model is presented, which takes into account strong impact-ionization effects on the high-frequency behavior of heterostructure field-effect transistors (HFET). The proposed model overcomes the limitations of previous models and includes the bipolar action of the space charge of holes generated by impact ionization. It is shown that the developed model is capable of explaining the anomalous high-frequency behavior of HFETs with channels of high indium content.

Keywords

S-parameters; equivalent circuits; impact ionisation; junction gate field effect transistors; microwave field effect transistors; semiconductor device breakdown; semiconductor device models; space charge; anomalous behavior; heterostructure field-effect transistors; high indium content channels; high-frequency behavior; microwave performance; small-signal equivalent-circuit model; space charge bipolar action; strong impact-ionization effects; Charge carrier processes; Circuits; HEMTs; Impact ionization; Indium; MODFETs; Microwave devices; Shape; Space charge; Threshold voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.823553

Filename

1273727