Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization

Author

Chang, Hong-Yeh ; Huang, Tian-Wei ; Huei Wang ; Yu-Chi Wang ; Chao, Pane-Chane ; Chen, Chung-Hsu

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

52

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

908

Lastpage

919

Abstract

Reflection-type binary phase-shift keying and in-phase and quadrature modulator monolithic microwave integrated circuits (MMICs) are reported in this paper. These MMICs are fabricated by 1-μm HBT process and evaluated successfully under vector signal characterization. A cold-mode HBT device model with varying bias conditions is proposed, which is suitable for millimeter-wave circuit design and simulation. The analysis and design equations of imbalance effects for the reflection-type modulators are also presented. These MMICs demonstrate measured error vector magnitude of less than 12%, a carrier rejection of better than 15 dB, and an adjacent channel power ratio of better than -21 dBc from 50 to 110 GHz.

Keywords

S-parameters; bipolar MIMIC; bipolar MMIC; modulators; quadrature phase shift keying; 50 to 110 GHz; IQ modulator MMIC; S-parameters; broadband HBT BPSK; cold-mode HBT device model; imbalance effects; insertion losses; millimeter-wave circuit design; millimeter-wave circuit simulation; millimeter-wave vector signal characterization; reflection-type binary phase-shift keying; varying bias conditions; Binary phase shift keying; Heterojunction bipolar transistors; MMICs; Microwave devices; Microwave integrated circuits; Millimeter wave integrated circuits; Monolithic integrated circuits; Phase modulation; Phase shift keying; Signal processing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.823573

Filename

1273733