DocumentCode
9253
Title
Wafer-Level Vacuum Sealing by Coining of Wire Bonded Gold Bumps
Author
Antelius, Mikael ; Fischer, Andreas C. ; Roxhed, Niclas ; Stemme, Goran ; Niklaus, Frank
Author_Institution
Dept. of Micro & Nanosyst., KTH R. Inst. of Technol., Stockholm, Sweden
Volume
22
Issue
6
fYear
2013
fDate
Dec. 2013
Firstpage
1347
Lastpage
1353
Abstract
This paper reports on the investigation of a novel room-temperature vacuum sealing method based on compressing wire bonded gold bumps which are placed to partially overlap the access ports into the cavity. The bump compression, which is done under vacuum, causes a material flow into the access ports, thereby hermetically sealing a vacuum inside the cavities. The sealed cavity pressure was measured by residual gas analysis to 8×10-4 mbar two weeks after sealing. The residual gas content was found to be mainly argon, which indicates the source as outgassing inside the cavity and no measurable external leak. The seals are found to be mechanically robust and easily implemented by the use of standard commercial tools and processes.
Keywords
lead bonding; vacuum techniques; wafer level packaging; argon; bump compression; cavity pressure; residual gas analysis; room-temperature vacuum sealing; wafer-level vacuum sealing; wire bonded gold bumps; MEMS; Vacuum; hermetic; packaging; sealing; wire bonding;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2013.2262594
Filename
6547226
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