Title :
20-GHz Band Monolithic GaAs FET Low-Noise Amplifier
Author :
Higashisaka, Asamitsu ; Mizuta, Takayuki
fDate :
1/1/1981 12:00:00 AM
Abstract :
A 20-GHs band monolithic GaAs FET low-noise amplifier has been developed. Design and fabrication were performed by obtaining the transmission properties of the microstrip lines on a semi-insulating GaAs substrate. The developed monolithic amplifier consists of a submicron gate GaAs MESFET and the input and output distributed matching circuits on a semi-insulating GaAs substrate measuring 2.75 mm x 1.45 mm. A noise figure of 6.2dB and an associated gain of 7.5 dB were obtained at 21 GHz without any additional tuning adjustments.
Keywords :
Distributed amplifiers; FETs; Fabrication; Gain; Gallium arsenide; Impedance matching; Low-noise amplifiers; MESFET circuits; Microstrip; Noise figure;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1981.1130277
