DocumentCode
925478
Title
wo-dimensional finite element simulation of semiconductor devices
Author
Barnes, J.J. ; Lomax, R.J.
Author_Institution
University of Michigan, Electron Physics Laboratory Department of Electrical & Computer Engineering, Ann Arbor, USA
Volume
10
Issue
16
fYear
1974
Firstpage
341
Lastpage
343
Abstract
Semiconductor-device modelling in two dimensions by the finite-element method is described. Results of application to a GaAs m.e.s.f.e.t. are given. Negative differential drain conductance is observed.
Keywords
field effect transistors; finite element analysis; semiconductor device models; field effect transistors; finite element analysis; negative differential drain conductance; semiconductor device models; semiconductor devices; simulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19740270
Filename
4236433
Link To Document