Energy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors

Author

Azoff, Ettan Michael

Author_Institution

Rutherford Appleton Lab., Chilton, UK

Volume

36

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

609

Lastpage

616

Abstract

The semiclassical high-field hydrodynamic transport equations, comprising the first three moments of the Boltzmann transport equation in the relaxation time approximation, are used to model the AlGaAs/GaAs heterojunction bipolar transistor. The transport equations are solved simultaneously in one dimension and in the steady state within a single-valley band-structure scheme. The device characteristics of graded Al profiles in the emitter-base and base regions are numerically evaluated

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; Boltzmann transport equation; base regions; device characteristics; emitter-base regions; heterojunction bipolar transistors; relaxation time approximation; semiclassical high-field hydrodynamic transport equations; single-valley band-structure scheme; Current density; Cutoff frequency; Effective mass; Electrons; Equations; Gallium arsenide; Heterojunction bipolar transistors; Numerical simulation; Radiative recombination; Spontaneous emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.22464

Filename

22464