• DocumentCode
    925604
  • Title

    The effect of interface and alloy quality on the DC and RF performance of Ga0.47In0.53As-Al0.48In 0.52As HEMTs

  • Author

    Brown, A.S. ; Mishra, U.K. ; Rosenbaum, S.E.

  • Author_Institution
    Hughes Res. Lab., Malibu, CA, USA
  • Volume
    36
  • Issue
    4
  • fYear
    1989
  • fDate
    4/1/1989 12:00:00 AM
  • Firstpage
    641
  • Lastpage
    645
  • Abstract
    Ga0.47In0.53As-Al0.48In0.52 As high-electron-mobility transistors (HEMTs) were fabricated in materials with varying degrees of alloy and interface disorder. The conductivities of the epitaxial layers are highest for material with the smallest amount of interface roughness and lowest for samples with poor-quality interfaces. The transconductances and unity current gain cutoff frequencies of the fabricated devices with 0.2-μm gates are similarly affected
  • Keywords
    aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; interface structure; 0.2 micron; Ga0.47In0.53As-Al0.48In0.52 As; RF performance; alloy quality; high-electron-mobility transistors; interface disorder; interface roughness; transconductances; unity current gain cutoff frequencies; Conducting materials; Cutoff frequency; Electron mobility; Epitaxial layers; Gallium alloys; Heterojunctions; Indium phosphide; Laboratories; Radio frequency; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.22468
  • Filename
    22468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925604