• DocumentCode
    926009
  • Title

    High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography

  • Author

    Ray, Sumon K. ; Choi, Tin Lun ; Groom, Kristian M. ; Stevens, Benjamin J. ; Liu, Huiyun ; Hopkinson, Mark ; Hogg, Richard A.

  • Author_Institution
    Univ. of Sheffield, Sheffield
  • Volume
    13
  • Issue
    5
  • fYear
    2007
  • Firstpage
    1267
  • Lastpage
    1272
  • Abstract
    Quantum dot (QD) superluminescent diodes (SLDs) exhibiting 8 mW and 95 nm full-width at half-maximum centered at 1270 nm are demonstrated with a flat-topped spectral profile. This is achieved using 3 times 2 dots in compositionally modulated wells technique. Furthermore, techniques for realization of high-power SLDs are also demonstrated. A continuous-wave output power of 42 mW is achieved for narrowband devices centered at 1250 nm.
  • Keywords
    broadband networks; optical tomography; semiconductor diodes; semiconductor lasers; semiconductor quantum dots; broadband networks; high power; narrowband devices; optical coherence tomography; power 8 mW; quantum dot superluminescent diodes; semiconductor lasers; size 1250 nm; size 1270 nm; Gallium arsenide; Indium; Optical attenuators; Optical interferometry; Optical scattering; Power generation; Quantum dots; Superluminescent diodes; Temperature; Tomography; Semiconductor lasers; quantum dot (QD); superluminescent diodes (SLDs);
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2007.902997
  • Filename
    4346510