Title :
The performance of GaAs field-effect transistors as microwave mixers
Author :
Sitch, J.E. ; Robson, P.N.
Author_Institution :
University of Sheffield, Sheffield, England
fDate :
3/1/1973 12:00:00 AM
Abstract :
The performance of Schottky barrier gate field-effect transistors (FET´s) as single-ended microwave mixers at 3 GHz is described. An increase in dynamic range of approximately 10 dB over conventional diode mixers is reported although the noise figures of FET miters at present are higher than for diode mixers.
Keywords :
Circuits; Cutoff frequency; Dielectrics; FETs; Gallium arsenide; Mixers; Noise figure; Resonator filters; Schottky diodes; Strips;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9050
