Title :
2.1-μm-Wavelength InGaAs Multiple-Quantum-Well Distributed Feedback Lasers Grown by MOVPE Using Sb Surfactant
Author :
Sato, Tomonari ; Mitsuhara, Manabu ; Watanabe, Takao ; Kasaya, Kazuo ; Takeshita, Tatsuya ; Kondo, Yasuhiro
Author_Institution :
NTT Corp., Kanagawa
Abstract :
A single-mode emission wavelength longer than 2.1 mum is obtained for a distributed feedback (DFB) laser with a strained InGaAs multiple-quantum-well active region on an InP substrate. The use of antimony surfactant during the metal-organic vapor-phase epitaxy (MOVPE) growth of the active region makes it possible to increase the strain of an InGaAs well up to 1.9%, and to extend the emission wavelength of a Fabry-Perot laser beyond 2.1 mum. The emission wavelength of the fabricated DFB laser can be adjusted from 2.103 to 2.107 mum by controlling the injection current and the operating temperature. The continuous-wave (CW) light output power is 8 and 3 mW at 25degC and 55deg C, respectively. The median lifetime estimated from an aging test with a constant output power of 2 mW at 45degC is over 105 h.
Keywords :
III-V semiconductors; MOCVD coatings; antimony; distributed feedback lasers; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; Fabry Perot laser; InGaAs - Interface; InP - Surface; MOVPE; Sb - Surface; aging test; continuous wave light; metal organic vapor phase epitaxy; multiple quantum well distributed feedback lasers; power 2 mW; power 3 mW; power 8 mW; semiconductor growth; temperature 25 C; temperature 45 degC; temperature 55 C; wavelength 2.1 mum; Capacitive sensors; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Laser feedback; Power generation; Quantum well devices; Substrates; Distributed feedback (DFB) laser; metal-organic vapor-phase epitaxy (MOVPE); midinfrared laser; surfactant;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2007.903588
