Title :
Reverse I-V characteristics in Au-GaAs Schottky diode in the presence of interfacial layer
Author :
Huang, C.I. ; Li, S.S.
Author_Institution :
University of Florida, Gainesville, Fla.
fDate :
4/1/1973 12:00:00 AM
Abstract :
The existence of an interfacial layer in an Au-GaAs Schottky diode may be revealed by measuring its I-V characteristics at very low reverse bias voltage. It is shown in this letter that a voltage dividing factor m can be used [see (2) of the text] to describe the effect of the interfacial layer on the I-V characteristics of the diode at low bias voltage.
Keywords :
Artificial intelligence; Conductivity; Fabrication; Gallium arsenide; Gold; Integrated circuit measurements; Integrated circuit metallization; Low voltage; Schottky diodes; Tunneling;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9072
