• DocumentCode
    926537
  • Title

    The Control of Frequency Response and Stability of Point-Contact Transistors

  • Author

    Slade, B.N.

  • Author_Institution
    Tube Dept., RCA Victor Division, Harrison, N.J.
  • Volume
    40
  • Issue
    11
  • fYear
    1952
  • Firstpage
    1382
  • Lastpage
    1384
  • Abstract
    The frequency response and stability of point-contact transistors are determined to a large degree by control of the point-contact spacing and germanium resistivity. Stability is particularly important in amplifiers in which the impedances of the emitter and collector circuits are very small in the frequency range in which the transistor is designed to operate. Satisfactory stability has been obtained with developmental transistors having a frequency cutoff (3-db drop in the current amplification factor, alpha) ranging from 10 to 30 mc. These transistors operate under approximately the same dc bias conditions used with lower-frequency transistors, and have an average power gain of approximately 20 db. By means of the methods outlined, transistors which oscillate at frequencies as high as 300 mc have been made.
  • Keywords
    Charge carrier processes; Circuit stability; Conductivity; Cutoff frequency; Electron tubes; Equivalent circuits; Frequency response; Germanium; Impedance; Stability criteria;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1952.273966
  • Filename
    4050838