Title :
Reliability of Power Gaas FET´s-Au Gates and Al-Au Linked Gates
Author :
Cohen, Eliot D. ; Macpherson, Alan C. ; Christou, Aristos
fDate :
7/1/1981 12:00:00 AM
Abstract :
An investigation of the reliability of two types of commercial microwave power GaAs FET\´s has been carried out. Mean-time-to-failure data for a device mounted face-up with Al gates but without an Al-Au couple is presented and similar data for a "flip-chip" mounted Au-refractory gate device is reviewed. The failure mechanisms for both devices are described.
Keywords :
Failure analysis; Gallium arsenide; Gold; Laboratories; Packaging; Radio frequency; Substrates; Temperature; Testing; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1981.1130422
