Title :
Double snapback in SOI nMOSFETs and its application for SOI ESD protection
Author :
Verhaege, Koen ; Groeseneken, Guido ; Colinge, Jean-Pierre ; Maes, Herman E.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
7/1/1993 12:00:00 AM
Abstract :
Double snapback in silicon-on-insulator (SOI) nMOSFETs is reported. An extensive experimental analysis of this phenomenon and a tentative model are presented. It is shown that this double-snapback phenomenon offers a basis for an electrostatic discharge (ESD) protection concept for SOI technologies.<>
Keywords :
electrostatic discharge; insulated gate field effect transistors; protection; semiconductor-insulator boundaries; 3D DAVINCI simulation; SOI ESD protection; SOI nMOSFET; SOI technologies; Si on insulator; double-snapback phenomenon; electrostatic discharge; modelling; optical light emission microscopy; semiconductor; Electrostatic discharge; MOSFETs; Protection; Silicon on insulator technology;
Journal_Title :
Electron Device Letters, IEEE
