Title :
Carrier lifetime in semiconductors for steady-state recombination conditions
Author :
van de Wiele, F.
Author_Institution :
Université Catholique de Louvain, Louvain-la-Neuve, Belgium
fDate :
6/1/1973 12:00:00 AM
Abstract :
An extension of the Shockley-Read expression for steady-state lifetime is proposed for inhomogeneous nondegenerate semiconductors under a nonuniform external generation Gn(Gp) of electrons (holes) and in the presence of current flow. The special case of small disturbances in carrier density for a semiconductor with local electrical neutrality is also considered.
Keywords :
Bridge circuits; Charge carrier lifetime; Delay effects; Gallium arsenide; Logic devices; Network address translation; Poisson equations; Radiative recombination; Signal generators; Steady-state;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9160
