Title :
High-speed high-power 1.06 μm gallium--indium-arsenide light-emitting diodes
Author :
Mabbitt, A.W. ; Mobsby, C.D.
Author_Institution :
Plessey Company Ltd., Allen Clark Research Centre, Towcester, UK
Abstract :
The preparation of l.06μm gallium--indium-arsenide light-emitting diodes is described. Power outputs of 1 mW at 55 mA d.c. and pulsed power outputs of up to 0.5 W have been obtained. Attenuation/modulation experiments have shown 3 dB attenuation at 110 MHz. The use of such diodes in fibre-optic communication systems is suggested.
Keywords :
light emitting diodes; optical communication equipment; optical modulation; 1.06 microns; attenuation/modulation experiments; fibre optic communication system; high speed high power GaInAs LED;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750120
