Title :
High-speed 1 μm GaAs m.e.s.f.e.t.
Author :
Kohn, Erhard ; W¿¿ller, R. ; Stahlmann, R. ; Beneking, H.
Author_Institution :
RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
Abstract :
By minimising parasitic series resistances, a GaAs m.e.s.f.e.t. with 1 μm gate length was fabricated, possessing the highest known r.f. power gain, measured up to 18 GHz, for GaAs m.e.s.f.e.t.s.
Keywords :
field effect transistors; solid-state microwave devices; 1 micron gate length; 18 GHz; RF power gain; high speed GaAs MESFET; microwave; parasitic series resistances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750131
