DocumentCode :
927507
Title :
Carrier Dynamics of Quantum-Dot, Quantum-Dash, and Quantum-Well Semiconductor Optical Amplifiers Operating at 1.55 μm
Author :
Zilkie, Aaron J. ; Meier, Joachim ; Mojahedi, Mo ; Poole, Philip J. ; Barrios, Pedro ; Poitras, Daniel ; Rotter, Thomas J. ; Yang, Chi ; Stintz, Andreas ; Malloy, Kevin J. ; Smith, Peter W E ; Aitchison, J.Stewart
Author_Institution :
Univ. of Toronto, Toronto
Volume :
43
Issue :
11
fYear :
2007
Firstpage :
982
Lastpage :
991
Abstract :
We assess the influence of the degree of quantum confinement on the carrier recovery times in semiconductor optical amplifiers (SOAs) through an experimental comparative study of three amplifiers, one InAs-InGaAsP-InP quantum dot (0-D), one InAs-InAlGaAs-InP quantum dash (1-D), and one InGaAsP-In-GaAsP-InP quantum well (2-D), all of which operate near 1.55-mum wavelengths. The short-lived (around 1 ps) and long-lived (up to 2 ns) amplitude and phase dynamics of the three devices are characterized via heterodyne pump-probe measurements. The quantum-dot device is found to have the shortest long-lived gain recovery (~80 ps) as well as gain and phase changes indicative of a smaller linewidth enhancement factor, making it the most promising for high-bit-rate applications. The quantum-dot amplifier is also found to have reduced ultrafast transients, due to a lower carrier density in the dots. The quantum-dot gain saturation characteristics and temporal dynamics also provide insight into the nature of the dot energy-level occupancy and the interactions of the dot states with the wetting layer.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; laser beams; optical information processing; quantum dot lasers; semiconductor optical amplifiers; semiconductor quantum dots; carrier recovery time; charge carrier lifetime; dot energy-level occupancy; heterodyne pump-probe measurements; optical modulation; optical signal processing; quantum-dash semiconductor optical amplifiers; quantum-dot amplifier; quantum-dot carrier dynamics; quantum-dot device; quantum-dot gain saturation characteristics; quantum-well semiconductor optical amplifiers; wavelength 1.55 mum; Councils; Optical amplifiers; Optical materials; Phase measurement; Potential well; Quantum dots; Quantum well devices; Quantum wells; Semiconductor optical amplifiers; Wavelength measurement; Charge carrier lifetime; optical modulation; optical signal processing; quantum dots (QDs); quantum wells (QWs); quantum wires; quantum-effect semiconductor devices; semiconductor optical amplifiers (SOAs); semiconductor switches;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2007.904474
Filename :
4346656
Link To Document :
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