Title :
Ion-implanted n+ contacts for Ka band GaAs Gunn-effect diodes
Author :
Lee, D.H. ; Berenz, J.J. ; Bernick, R.L.
Author_Institution :
Hughes Research Laboratories, Malibu, USA
Abstract :
Shallow (<1 ¿m) n-type doping profiles with peak carrier concentrations of ¿ 8 × 1017 cm¿3 have been formed by sulphur-ion implantation into vapour-phase GaAs epitaxial layers for improved Gunn-effect-diode contacts. Continuous wave output powers in excess of 250 mW were measured at 35 GHz, with the implanted n+ profile biased either as an electron cathode or anode contact.
Keywords :
Gunn diodes; ion implantation; semiconductor device manufacture; solid-state microwave devices; GaAs Gunn diode; Ka-band; carrier concentrations; doping profiles; epitaxial layers; ion implanted n+ contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750145
