Title :
GaAs double-drift avalanche diode from vapour-phase epitaxy
Author :
Tantraporn, W. ; Yu, S.P.
Author_Institution :
General Electric Company, Corporate Research and Development Center, Schenectady, USA
Abstract :
p-type doping of GaAs grown by a vapour-epitaxy technique is accomplished in the range of 1015 cm¿3 using a Zn source in a controlled-temperature zone, n-type doping is accomplished by admitting a controlled admixture of SnCl4 and AsCl3 into the system. Diodes were fabricated from a p¿n¿n+ substrate wafer and operated in an I¿C TRAPATT mode in a compact circuit. TRAPATT action yields a spiky current waveform useful as a pulse generator.
Keywords :
III-V semiconductors; avalanche diodes; epitaxial growth; gallium arsenide; semiconductor device manufacture; semiconductor doping; semiconductor growth; AsCl3; GaAs double drift avalanche diode; I-C TRAPATT mode; SnCl4; Zn source; n-type doping; p-n-n+ substrate wafer; p-type doping; pulse generator; vapour phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750150
