Title :
An investigation of the relation between the interface state and 1/f noise behaviors in silicon MOS transistor with the negative bias-heat treatment
Author :
Kobayashi, I. ; Nakahara, M. ; Atsumi, M.
Author_Institution :
Fujitsu Ltd., Kobe, Japan
Abstract :
A significant relation has been found between a change in interface state density distribution and an unusual 1/f noise behavior resulting from the field intensity used for negative bias-heat treatment by elaborately fabricated samples coupled with the MOS conductance technique.
Keywords :
Density measurement; Energy measurement; Impurities; Interface states; MOS capacitors; MOSFETs; Noise level; Noise measurement; Photonic band gap; Silicon;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9221
