Title :
Experiments on integrated gallium-arsenide f.e.t. oscillators at X band
Author :
Pucel, R.A. ; Bera, R. ; Masse, D.
Author_Institution :
Raytheon Company, Research Division, Waltham, USA
Abstract :
Experimental results obtained with GaAs f.e.t. oscillators at X band are described. It is demonstrated that the output power of f.e.t. oscillators is sufficient to drive X band mixers. The noise measure of these oscillators is competitive with Gunn devices, and can be reduced further.
Keywords :
field effect transistors; hybrid integrated circuits; microwave oscillators; solid-state microwave circuits; MIC, GaAs FET oscillators; X-band; mixers; noise measure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750167
