Title :
Measurement of the base resistance of bipolar transistors
Author :
Meijer, G.C.M. ; de Ronde, H.J.A.
Author_Institution :
Delft University of Technology, Department of Electrical Engineering, Delft, Netherlands
Abstract :
By measuring the transistor parameters hfe and yfb as functions of frequency, it is possible to determine the base resistance of bipolar transistors. This method has proved to be fast and accurate over a relatively large current range for integrated-circuit transistors, as well as for many types of discrete transistors.
Keywords :
bipolar transistors; equivalent circuits; monolithic integrated circuits; resistance measurement; base resistance; bipolar transistors; discrete transistors; frequency; integrated circuit transistors; transistor parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750188
