• DocumentCode
    928068
  • Title

    Measurement of the base resistance of bipolar transistors

  • Author

    Meijer, G.C.M. ; de Ronde, H.J.A.

  • Author_Institution
    Delft University of Technology, Department of Electrical Engineering, Delft, Netherlands
  • Volume
    11
  • Issue
    12
  • fYear
    1975
  • Firstpage
    249
  • Lastpage
    250
  • Abstract
    By measuring the transistor parameters hfe and yfb as functions of frequency, it is possible to determine the base resistance of bipolar transistors. This method has proved to be fast and accurate over a relatively large current range for integrated-circuit transistors, as well as for many types of discrete transistors.
  • Keywords
    bipolar transistors; equivalent circuits; monolithic integrated circuits; resistance measurement; base resistance; bipolar transistors; discrete transistors; frequency; integrated circuit transistors; transistor parameters;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750188
  • Filename
    4236705
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928068