• DocumentCode
    928840
  • Title

    Bias-tuned double-drift impatt diodes for wide-bandwidth operation

  • Author

    Ying, R.S. ; Lee, D.H.

  • Author_Institution
    Hughes Aircraft Company, IEG Torrance Research Center, Torrance, USA
  • Volume
    11
  • Issue
    15
  • fYear
    1975
  • Firstpage
    345
  • Lastpage
    346
  • Abstract
    Double-drift IMPATT diodes with asymmetrical p- and n-type doping concentrations have exhibited output power levels of 3 mW to greater than 100 mW when bias tuned over a 20 GHz bandwidth in a Q band (40¿60 GHz) reduced waveguide circuit. Similar output powers were also measured for the same asymmetrical diodes at V band (50¿75 GHz) with tunable bandwidths of approximately 18 GHz.
  • Keywords
    IMPATT diodes; microwave oscillators; solid-state microwave circuits; solid-state microwave devices; tuning; Q-band reduced waveguide circuits; bias tuned double drift IMPATT diodes; wide bandwidth operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750264
  • Filename
    4236784
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928840