• DocumentCode
    930102
  • Title

    High-efficiency GaAs m.e.s.f.e.t. amplifiers

  • Author

    Huang, H.C. ; Drukier, I. ; Camisa, R.L. ; Narayan, S.Y. ; Jolly, S.T.

  • Author_Institution
    RCA Laboratories, David Sarnoff Research Center, Princeton, USA
  • Volume
    11
  • Issue
    21
  • fYear
    1975
  • Firstpage
    508
  • Lastpage
    509
  • Abstract
    High-efficiency c.w. amplification with GaAs m.e.s.f.e.t.s under class-B conditions has been demonstrated. Power added efficiencies as high as 68% at 4 GHz and 41% at 8 GHz have been achieved. Two-tone tests were carried out at 4 GHz. The power added efficiencies at the 3rd-order intermodulation levels of ¿20, ¿25 and ¿30 dB were 49, 40 and 35% respectively.
  • Keywords
    field effect transistors; microwave amplifiers; solid-state microwave circuits; solid-state microwave devices; 3rd order intermodulation levels; 4 GHz; 8 GHz; CW amplification; class-B conditions; high efficiency GaAs MESFET amplifier; power added efficiencies; two tone tests;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750392
  • Filename
    4236919
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930102