Title :
High-power single-mode 2.0 mu m laser diodes
Author :
Major, J.S., Jr. ; Nam, D.W. ; Osinski, J.S. ; Welch, D.F.
Author_Institution :
SDL Inc., San Jose, CA, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
Data are presented on high-power single-mode index-guided laser diodes fabricated from a strained-layer InGaAs-InGaAsP double quantum well heterostructure epitaxial design. The total maximum power and external efficiency achieved are 50 mW and 43%, respectively. The far-field is measured to be 31 degrees by 46 degrees in the parallel and perpendicular directions, yielding an aspect ratio of 1.5 for the single-mode laser diode. The optical output of the laser diode is a multi-longitudinal mode spectrum spanning 1.98-2.00 mu m at an output power of 50 mW CW. The characteristic temperature of the laser diode is 48 K.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor lasers; 1.98 to 2.00 micron; 2.0 micron; 43 percent; 48 K; 50 mW; CW lasing; IR; InGaAs-InGaAsP; aspect ratio; double quantum well heterostructure epitaxial design; external efficiency; far-field; high-power; index-guided; laser diodes; multi-longitudinal mode spectrum; optical output; output power; semiconductors; single-mode; strained-layer; total maximum power; Conducting materials; Diode lasers; Indium gallium arsenide; Indium phosphide; Laser excitation; Optical materials; Power generation; Solid lasers; Thermal conductivity; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
