• DocumentCode
    930450
  • Title

    Deep-level defects in red GaAs1-xPxlight-emitting diodes

  • Author

    Forbes, L. ; Vaughn, C.K.

  • Author_Institution
    University of Arkansas, Fayetteville, Ark.
  • Volume
    62
  • Issue
    4
  • fYear
    1974
  • fDate
    4/1/1974 12:00:00 AM
  • Firstpage
    534
  • Lastpage
    535
  • Abstract
    A wide variety of deep-level recombination centers have been observed at large concentrations in commercially available red GaAsP light-emitting diode p-n junctions. Similar defects have not been observed in GaP diodes. The characteristics, probable cause, and possible effect on luminescence efficiency of these deep-level defect centers are described.
  • Keywords
    Capacitance; Charge carrier lifetime; Electron traps; Energy states; Gallium arsenide; Lattices; Light emitting diodes; Photonic band gap; Substrates; Zinc;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9468
  • Filename
    1451398
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930450