GaAs 850 nm modulators solder-bonded to silicon

Author

Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

5

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

776

Lastpage

778

Abstract

GaAs/AlGaAs p-i-n multiple-quantum-well modulators solder-bonded to a silicon substrate are reported. The GaAs substrate is then chemically removed to allow operation at 850 nm. The gold contact to the modulator is used as the reflector. A change in reflectivity from 26% to 52% is achieved for a 0 to 10 V bias swing. The device has a modulation saturation intensity of 80 kW/cm/sup 2/, demonstrating superb heat-sinking and ohmic contact. The hybrid was cycled from 30 degrees C to 100 degrees C over a 100 times, and it showed no degradation, exhibiting the practicality of the technique.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated circuit technology; integrated optics; optical modulation; reflectivity; soldering; 0 to 10 V; 30 to 100 degC; 850 nm; Au contact; GaAs; GaAs substrate; IR; Si; bias swing; chemically removed; heat-sinking; life testing; modulation saturation intensity; ohmic contact; p-i-n multiple-quantum-well modulators; reflectivity; reflector; semiconductor device testing; semiconductors; soldering; Chemicals; Degradation; Gallium arsenide; Gold; Intensity modulation; Ohmic contacts; PIN photodiodes; Quantum well devices; Reflectivity; Silicon;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.229803

Filename

229803