• DocumentCode
    932009
  • Title

    Planar analog transistor

  • Author

    Mimura, Takashi

  • Author_Institution
    Fujitsu Ltd., Kobe, Japan
  • Volume
    62
  • Issue
    9
  • fYear
    1974
  • Firstpage
    1285
  • Lastpage
    1287
  • Abstract
    Diffused planar structure of analog transistor is developed using high-resistivity n-type silicon. Experimental characteristic of the device is compared with a conventional theory, and certain apparent discrepancy is qualitatively explained. The obtained unilateral power gain is 8.2 dB at 1 GHz.
  • Keywords
    Conductivity; Dielectric substrates; Differential equations; Fabrication; Gallium arsenide; Maxwell equations; Nonlinear equations; Silicon; Solitons; Tellurium;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9613
  • Filename
    1451543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=932009